Infineon · FETs & Power MOSFETs · MPN IQDH29NE2LM5CGATMA1
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| Drain to Source Voltage | 25V |
|---|---|
| Gate Charge(Qg) | 254nC@10V |
| Current - Continuous Drain(Id) | 789A |
| Output Capacitance(Coss) | 7nF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 278W |
| RDS(on) | 0.35mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 660pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 17nF |
| Type | N-Channel |
N-Channel 25V WHTFN-9