Infineon IQD063N15NM5SCATMA1

Infineon · FETs & Power MOSFETs · MPN IQD063N15NM5SCATMA1

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Specifications

Drain to Source Voltage150V
Gate Charge(Qg)48nC@10V
Output Capacitance(Coss)900pF
Current - Continuous Drain(Id)151A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.8V
Pd - Power Dissipation333W
Reverse Transfer Capacitance (Crss@Vds)21pF
RDS(on)5.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.6nF
TypeN-Channel

Technical details

150V 151A 3.8V 333W 5.1mΩ@10V 1 N-channel N-Channel SON-8 Single FETs, MOSFETs RoHS

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