Infineon · FETs & Power MOSFETs · MPN IQD063N15NM5CGATMA1
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| Drain to Source Voltage | 150V |
|---|---|
| Gate Charge(Qg) | 48nC@10V |
| Output Capacitance(Coss) | 900pF |
| Current - Continuous Drain(Id) | 148A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 278W |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF |
| RDS(on) | 5.1mΩ@10V |
| Input Capacitance(Ciss) | 3.6nF |
| Type | N-Channel |
150V 148A 3.8V 278W 5.1mΩ@10V N-Channel PG-TTFN-9 Single FETs, MOSFETs RoHS