Infineon · FETs & Power MOSFETs · MPN IQD020N10NM5CGATMA1
No reviews yet — be the first to review Infineon IQD020N10NM5CGATMA1.
| Gate Charge(Qg) | 134nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 273A |
| Output Capacitance(Coss) | 1.3nF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 333W |
| RDS(on) | 2.75mΩ@6V |
| Reverse Transfer Capacitance (Crss@Vds) | 74pF |
| Input Capacitance(Ciss) | 9.5nF |
| Type | N-Channel |
100V 273A 3.8V 333W 2.75mΩ@6V N-Channel Single FETs, MOSFETs RoHS