Infineon · FETs & Power MOSFETs · MPN IQD016N08NM5SCATMA1
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 106nC@10V |
| Current - Continuous Drain(Id) | 323A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 333W |
| RDS(on) | 1.4mΩ@10V |
| Number | 1 N-channel |
| Type | N-Channel |
80V 323A 3V 333W 1.4mΩ@10V 1 N-channel N-Channel PG-WHSON-8 Single FETs, MOSFETs RoHS