Infineon · FETs & Power MOSFETs · MPN IQD016N08NM5CGSCATMA1
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| Output Capacitance(Coss) | 1.2nF |
|---|---|
| Pd - Power Dissipation | 333W |
| Configuration | - |
| Gate Charge(Qg) | 106nC |
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Reverse Transfer Capacitance (Crss@Vds) | 56pF |
| RDS(on) | 1.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.1nF |
333W 80V 3V 1.4mΩ@10V 1 N-channel N-Channel WHTFN-9 Single FETs, MOSFETs RoHS