Infineon · FETs & Power MOSFETs · MPN IQD009N06NM5SCATMA1
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 120nC@10V |
| Output Capacitance(Coss) | 1.8nF |
| Current - Continuous Drain(Id) | 445A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 333W |
| RDS(on) | 0.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9nF |
| Type | N-Channel |
60V 445A 2.8V 333W 0.8mΩ@10V 1 N-channel N-Channel SON-8 Single FETs, MOSFETs RoHS