Infineon · FETs & Power MOSFETs · MPN IQD009N06NM5CGATMA1
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 150nC@10V |
| Output Capacitance(Coss) | 2.3nF |
| Current - Continuous Drain(Id) | 445A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.3V |
| Pd - Power Dissipation | 333W |
| RDS(on) | 1.27mΩ@6V |
| Reverse Transfer Capacitance (Crss@Vds) | 190pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 12nF |
| Type | N-Channel |
N-Channel 60V 445A 333W WHTFN-9