Infineon IQD005N04NM6CGATMA1

Infineon · FETs & Power MOSFETs · MPN IQD005N04NM6CGATMA1

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)161nC@10V
Current - Continuous Drain(Id)610A
Output Capacitance(Coss)3.8nF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation333W
Reverse Transfer Capacitance (Crss@Vds)91pF
Number1 N-channel
Input Capacitance(Ciss)12nF
TypeN-Channel

Technical details

N-Channel 40V TTFN-9

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