Infineon · FETs & Power MOSFETs · MPN IPZA65R040CM8XKSA1
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| Output Capacitance(Coss) | 44pF |
|---|---|
| Pd - Power Dissipation | 329W |
| Configuration | - |
| Gate Charge(Qg) | 80nC |
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 4.2V |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 33mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.796nF |
329W 650V 4.2V 33mΩ@10V 1 N-channel N-Channel TO-247-4 Single FETs, MOSFETs RoHS