Infineon IPZA65R029CFD7XKSA1

Infineon · FETs & Power MOSFETs · MPN IPZA65R029CFD7XKSA1

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)145nC@10V
Output Capacitance(Coss)106pF
Current - Continuous Drain(Id)69A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation305W
RDS(on)29mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.149nF

Technical details

650V 69A 4.5V 305W 29mΩ@10V 1 N-channel TO-247-4 Single FETs, MOSFETs RoHS

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