Infineon · FETs & Power MOSFETs · MPN IPZA60R037P7
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| Gate Charge(Qg) | 121nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 48A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 255W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 37mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.243nF |
N-Channel 650V 48A 255W Through Hole TO-247-4