Infineon · FETs & Power MOSFETs · MPN IPZA60R024P7
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| Gate Charge(Qg) | 164nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 63A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 291W |
| Reverse Transfer Capacitance (Crss@Vds) | 2.136nF |
| RDS(on) | 24mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.144nF |
650V 63A 291W 24mΩ@10V 1 N-channel TO-247-4 Single FETs, MOSFETs RoHS