Infineon · FETs & Power MOSFETs · MPN IPZ40N04S58R4ATMA1
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| Gate Charge(Qg) | 13.7nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 215pF |
| Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.4V |
| Pd - Power Dissipation | 34W |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| RDS(on) | 8.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 771pF |
| Type | N-Channel |
40V 40A 3.4V 34W 8.4mΩ@10V 1 N-channel N-Channel TSDSON-8 Single FETs, MOSFETs RoHS