Infineon · FETs & Power MOSFETs · MPN IPZ40N04S55R4ATMA1
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| Gate Charge(Qg) | 23nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | -55℃~+175℃ |
| Pd - Power Dissipation | 48W |
| RDS(on) | 5.4mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 29pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.3nF |
40V 40A 48W 5.4mΩ@10V 1 N-channel TSDSON-8-32 Single FETs, MOSFETs RoHS