Infineon IPZ40N04S53R9ATMA1

Infineon · FETs & Power MOSFETs · MPN IPZ40N04S53R9ATMA1

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)25nC@10V
Output Capacitance(Coss)485pF
Current - Continuous Drain(Id)89A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.4V
Pd - Power Dissipation58W
Reverse Transfer Capacitance (Crss@Vds)32pF
RDS(on)3.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.737nF
TypeN-Channel

Technical details

40V 89A 3.4V 58W 3.9mΩ@10V 1 N-channel N-Channel TSDSON-8 Single FETs, MOSFETs RoHS

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