Infineon · FETs & Power MOSFETs · MPN IPWS65R035CFD7AXKSA1
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 145nC@10V |
| Current - Continuous Drain(Id) | 63A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 305W |
| RDS(on) | 35mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.149nF |
650V 63A 4.5V 305W 35mΩ@10V 1 N-channel TO-247-3-41 Single FETs, MOSFETs RoHS