Infineon · FETs & Power MOSFETs · MPN IPWS65R022CFD7AXKSA1
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| Gate Charge(Qg) | 234nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 151pF |
| Current - Continuous Drain(Id) | 96A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 446W |
| RDS(on) | 22mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 11.659nF |
| Type | N-Channel |
650V 96A 4.5V 446W 22mΩ@10V 1 N-channel N-Channel TO-247-3-31 Single FETs, MOSFETs RoHS