Infineon IPW90R1K0C3

Infineon · FETs & Power MOSFETs · MPN IPW90R1K0C3

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Specifications

Drain to Source Voltage900V
Current - Continuous Drain(Id)5.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation89W
RDS(on)1Ω@10V
Reverse Transfer Capacitance (Crss@Vds)42pF
Number1 N-channel
Input Capacitance(Ciss)850pF

Technical details

N-Channel 900V 5.7A 89W Through Hole TO-247

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