Infineon IPW65R420CFD

Infineon · FETs & Power MOSFETs · MPN IPW65R420CFD

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Specifications

Gate Charge(Qg)31.5nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)8.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation83.3W
Reverse Transfer Capacitance (Crss@Vds)161pF
RDS(on)420mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)870pF

Technical details

650V 8.7A 83.3W Through Hole TO-247-3

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