Infineon · FETs & Power MOSFETs · MPN IPW65R115CFD7AXKSA1
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 41nC |
| Current - Continuous Drain(Id) | 21A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 114W |
| Reverse Transfer Capacitance (Crss@Vds) | 741pF |
| RDS(on) | 115mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.95nF |
N-Channel 650V 21A 114W Through Hole TO-247-3-41