Infineon · FETs & Power MOSFETs · MPN IPW65R099C6
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| Gate Charge(Qg) | 127nC |
|---|---|
| Drain to Source Voltage | 700V |
| Current - Continuous Drain(Id) | 38A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 278W |
| Reverse Transfer Capacitance (Crss@Vds) | 525pF |
| RDS(on) | 99mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.78nF |
N-Channel 700V 38A 278W Through Hole TO-247