Infineon · FETs & Power MOSFETs · MPN IPW65R095C7
No reviews yet — be the first to review Infineon IPW65R095C7.
| Gate Charge(Qg) | 45nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 33pF |
| Current - Continuous Drain(Id) | 24A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 128W |
| RDS(on) | 95mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.14nF |
N-Channel 650V 24A 128W Through Hole TO-247