Infineon IPW65R080CFDFKSA1

Infineon · FETs & Power MOSFETs · MPN IPW65R080CFDFKSA1

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Specifications

Drain to Source Voltage700V
Gate Charge(Qg)170nC@10V
Current - Continuous Drain(Id)43.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation391W
RDS(on)80mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.03nF

Technical details

N-Channel 700V 43.3A 391W Through Hole TO-247-3-1

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