Infineon · FETs & Power MOSFETs · MPN IPW65R080CFDA
No reviews yet — be the first to review Infineon IPW65R080CFDA.
| Gate Charge(Qg) | 161nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 43.3A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 391W |
| Reverse Transfer Capacitance (Crss@Vds) | 754pF |
| RDS(on) | 80mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.44nF |
650V 43.3A 391W Through Hole TO-247