Infineon · FETs & Power MOSFETs · MPN IPW65R075CFD7AXKSA1
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 68nC@10V |
| Current - Continuous Drain(Id) | 32A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 171W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.153nF |
| RDS(on) | 75mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.288nF |
650V 32A 4.5V 171W 75mΩ@10V 1 N-channel TO-247-3-41 Single FETs, MOSFETs RoHS