Infineon IPW65R070C6FKSA1

Infineon · FETs & Power MOSFETs · MPN IPW65R070C6FKSA1

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)170nC@10V
Current - Continuous Drain(Id)53.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation391W
RDS(on)70mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.9nF

Technical details

N-Channel 650V 53.5A 391W Through Hole TO-247-3-1

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