Infineon · FETs & Power MOSFETs · MPN IPW65R065C7XKSA1
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 64nC@10V |
| Current - Continuous Drain(Id) | 21A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 171W |
| RDS(on) | 65mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.02nF |
650V 21A 3.5V 171W 65mΩ@10V 1 N-channel TO-247-3 Single FETs, MOSFETs RoHS