Infineon · FETs & Power MOSFETs · MPN IPW65R060CFD7XKSA1
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 68nC@10V |
| Output Capacitance(Coss) | 51pF |
| Current - Continuous Drain(Id) | 36A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 171W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.231nF |
| RDS(on) | 60mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.288nF |
| Type | N-Channel |
650V 36A 4.5V 171W 60mΩ@10V 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS