Infineon · FETs & Power MOSFETs · MPN IPW65R048CFDA
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| Gate Charge(Qg) | 270nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 63.3A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 500W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.26nF |
| RDS(on) | 48mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.44nF |
650V 63.3A 4V 500W 48mΩ@10V 1 N-channel TO-247-3 Single FETs, MOSFETs RoHS