Infineon · FETs & Power MOSFETs · MPN IPW65R041CFD
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| Gate Charge(Qg) | 300nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 68.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 500W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.485nF |
| RDS(on) | 41mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.4nF |
650V 68.5A 500W Through Hole TO-247