Infineon · FETs & Power MOSFETs · MPN IPW65R037C6FKSA1
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| Gate Charge(Qg) | 330nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 83.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 500W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 37mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.24nF |
N-Channel 650V 83.2A 500W Through Hole TO-247-3