Infineon · FETs & Power MOSFETs · MPN IPW60R199CP
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| Gate Charge(Qg) | 33nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 16A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 139W |
| Reverse Transfer Capacitance (Crss@Vds) | 180pF |
| RDS(on) | 199mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.52nF |
650V 16A 2.5V 139W 199mΩ@10V 1 N-channel TO-247-3 Single FETs, MOSFETs RoHS