Infineon · FETs & Power MOSFETs · MPN IPW60R160C6
No reviews yet — be the first to review Infineon IPW60R160C6.
| Gate Charge(Qg) | 75nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 23.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 176W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 160mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.66nF |
N-Channel 650V 23.8A 176W Through Hole TO-247