Infineon · FETs & Power MOSFETs · MPN IPW60R125P6XKSA1
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 56nC@10V |
| Output Capacitance(Coss) | 110pF |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 219W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 125mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.66nF |
600V 30A 4.5V 219W 125mΩ@10V 1 N-channel TO-247-3 Single FETs, MOSFETs RoHS