Infineon IPW60R120C7

Infineon · FETs & Power MOSFETs · MPN IPW60R120C7

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Specifications

Gate Charge(Qg)34nC@10V
Drain to Source Voltage600V
Current - Continuous Drain(Id)31A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation92W
Reverse Transfer Capacitance (Crss@Vds)515pF
RDS(on)231mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.5nF

Technical details

N-Channel 600V 31A 92W Through Hole TO-247

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