Infineon IPW60R099CPAFKSA1

Infineon · FETs & Power MOSFETs · MPN IPW60R099CPAFKSA1

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Specifications

Gate Charge(Qg)80nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)130pF
Current - Continuous Drain(Id)31A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation255W
RDS(on)105mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.8nF
TypeN-Channel

Technical details

N-Channel 600V 31A 255W Through Hole TO-247-3

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