Infineon · FETs & Power MOSFETs · MPN IPW60R099CM8XKSA1
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| Output Capacitance(Coss) | 18pF |
|---|---|
| Pd - Power Dissipation | 176W |
| Configuration | - |
| Gate Charge(Qg) | 31nC |
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.2V |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 83mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.33nF |
176W 600V 4.2V 83mΩ@10V 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS