Infineon · FETs & Power MOSFETs · MPN IPW60R099C7
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| Gate Charge(Qg) | 42nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 36A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 110W |
| Reverse Transfer Capacitance (Crss@Vds) | 641pF |
| RDS(on) | 99mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.819nF |
N-Channel 650V 36A 110W Through Hole TO-247