Infineon · FETs & Power MOSFETs · MPN IPW60R060P7
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| Gate Charge(Qg) | 67nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 164W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 60mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.895nF |
N-Channel 600V 30A 164W Through Hole TO-247-3