Infineon IPW60R060C7

Infineon · FETs & Power MOSFETs · MPN IPW60R060C7

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Specifications

Gate Charge(Qg)68nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)54pF
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation162W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)60mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.85nF

Technical details

N-Channel 162W Through Hole TO-247

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