Infineon · FETs & Power MOSFETs · MPN IPW60R041P6
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| Gate Charge(Qg) | 170nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 49A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 481W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 41mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.18nF |
650V 49A 4.5V 481W 41mΩ@10V 1 N-channel TO-247-3 Single FETs, MOSFETs RoHS