Infineon · FETs & Power MOSFETs · MPN IPW60R041C6FKSA1
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 290nC@10V |
| Current - Continuous Drain(Id) | 77.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | - |
| RDS(on) | 41mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.53nF |
| Type | N-Channel |
600V 77.5A 3.5V 41mΩ@10V 1 N-channel N-Channel TO-247-3-1 Single FETs, MOSFETs RoHS