Infineon IPW60R040C7

Infineon · FETs & Power MOSFETs · MPN IPW60R040C7

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Specifications

Gate Charge(Qg)107nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)73A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation227W
Reverse Transfer Capacitance (Crss@Vds)1.64nF
RDS(on)40mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.34nF

Technical details

N-Channel 650V 73A 227W Through Hole TO-247

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