Infineon IPW60R037P7XKSA1

Infineon · FETs & Power MOSFETs · MPN IPW60R037P7XKSA1

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Specifications

Gate Charge(Qg)121nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)48A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation255W
RDS(on)37mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.243nF

Technical details

N-Channel 48A 255W Through Hole TO-247-3

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