Infineon IPW60R037CSFD

Infineon · FETs & Power MOSFETs · MPN IPW60R037CSFD

No reviews yet — be the first to review Infineon IPW60R037CSFD.

Specifications

Gate Charge(Qg)136nC@10V
Drain to Source Voltage600V
Current - Continuous Drain(Id)54A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation245W
Reverse Transfer Capacitance (Crss@Vds)47pF
RDS(on)31mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.623nF

Technical details

N-Channel 600V 54A 245W Through Hole TO-247-3

Related FETs & Power MOSFETs