Infineon · FETs & Power MOSFETs · MPN IPW60R024P7XKSA1
No reviews yet — be the first to review Infineon IPW60R024P7XKSA1.
| Gate Charge(Qg) | 164nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 114pF |
| Current - Continuous Drain(Id) | 101A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 291W |
| RDS(on) | 24mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.144nF |
600V 101A 4V 291W 24mΩ@10V 1 N-channel TO-247-3-41 Single FETs, MOSFETs RoHS