Infineon IPW60R017C7

Infineon · FETs & Power MOSFETs · MPN IPW60R017C7

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Specifications

Gate Charge(Qg)240nC@10V
Drain to Source Voltage600V
Current - Continuous Drain(Id)129A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation446W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)17mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)9.89nF

Technical details

600V 129A 3.5V 446W 17mΩ@10V 1 N-channel TO-247-3 Single FETs, MOSFETs RoHS

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