Infineon · FETs & Power MOSFETs · MPN IPW60R016CM8XKSA1
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| Gate Charge(Qg) | 171nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 123A |
| Output Capacitance(Coss) | 91pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.2V |
| Pd - Power Dissipation | 521W |
| RDS(on) | 13mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.545nF |
600V 123A 4.2V 521W 13mΩ@10V 1 N-channel TO-247-3 Single FETs, MOSFETs RoHS