Infineon IPW50R280CE

Infineon · FETs & Power MOSFETs · MPN IPW50R280CE

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Specifications

Gate Charge(Qg)32.6nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)49pF
Current - Continuous Drain(Id)18.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation119W
Reverse Transfer Capacitance (Crss@Vds)49pF
RDS(on)280mΩ@13V
Number1 N-channel
Input Capacitance(Ciss)773pF

Technical details

500V 18.1A 3.5V 119W 280mΩ@13V 1 N-channel TO-247-3 Single FETs, MOSFETs RoHS

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